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• W119117095 abstract "While the scaling limits of MOSFET have been widely researched, the scaling ofMultiple Input Floating Gate (MIFG) MOSFET devices has been receiving lessattention. The MIFG MOSFET has short channel effect that arises from the scalingof the device at a more significant level than the typical MOSFET because theexistence of the floating gate electrode widens the distance of the input gates and thechannel. This distance weakens the ability of the gate to control the channel chargeeffectively which leads to higher short channel effects.Tri-gate MIFG MOSFET proposed in this thesis is combination technologies of aMIFG MOSFET planar device structure and a 3-D Tri-gate transistor. The ability tocircumvent short channel effect of the Tri-gate MOSFET are emphasized on thesubthreshold characteristic of the device by monitoring the DIBL and subthresholdslope parameter and is compared with a bulk MIFG MOSFET structure at equaltechnology parameter. The device coupling capacitor and voltage bias at control gateare varied in order to analyze its influence on these effects. Two different structures,Top Tri-gate MIFG MOSFET and Side Tri-gate MIFG MOSFET were studied. This research focuses in the physical MIFG MOSFET structures and analyzes its shortchannel effect behavior by performing 3-D computer-based numerical simulationsusing Davinci simulator.There were two sets of results obtained when comparing the short channel effect ofthe two Tri-gate MIFG MOSFETs with bulk MIFG MOSFET. At C2/C1 ≤ 1 and atvariable Vgate2, Tri-gate MIFG MOSFETs shows better results than the bulk MIFGMOSFET in subthreshold slope and DIBL effect with best in C2/C1 = 0.5 followed byC2/C1 = 1. From the electrostatic potential distribution graph of the devices, the bettershort channel effect suppression can be interpreted as a result of better gatecontrollability in the Tri-gate MIFG MOSFET than the bulk MIFG MOSFETchannel.However, for C2/C1 > 1, overall Tri-gate MIFG MOSFETs shows worse shortchannel effects than the bulk MIFG MOSFET. The Tri-gate device structure showsthe worst short channel effect behavior than the bulk device structure whichcontradicts with the previous results. The correlation between C2/C1≤1 and C2/C1>1for a two-input gates in the Tri-gate MIFG MOSFET to control short channel effectsis that gate 1 as the signal gate has to have a large area in order to control the channeleffectively. At the same time, the voltage applied at gate 2 has to be controlled just tobe sufficiently enough to turn on the transistor. The placement of the input gates asthe top and side of the floating gate does give significant effect in the simulationresults where the Top Tri-gate MIFG MOSFET gives better or approximately samedata with the Side Tri-gate MIFG MOSFET.It can be concluded that the suppression of short channel effects of the Tri-gateMIFG MOSFET must not only consider the Tri-gate structure itself, but must alsotake into account the area of input gate coupling capacitance, voltage bias andplacement of the input gates." @default.
• W119117095 created "2016-06-24" @default.
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• W119117095 date "2008-07-01" @default.
• W119117095 modified "2023-09-27" @default.
• W119117095 title "Simulation and Analysis of Short Channel Effects on Bulk and Tri-Gate Multiple Input Floating Gate Mosfet" @default.
• W119117095 hasPublicationYear "2008" @default.
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