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• W12067671 abstract "In this work the electrical characterization of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown epitaxially on composite SiCopSiC, SopSiC and silicon substrate processed in the frame of the European HYPHEN project have been reported. A full set of electrical characterization, DC, Pulsed and RF has been carried out. Some preliminary breakdown measurements have been also carried out. By comparing to the state of the art device developed since more than 10 years GaN on SiC to those of HYPHEN projects GaN on hybrid substrate, the electrical performance observed are good well in line. The main DC parameters (Maximum drain current, maximum transconductance, gate leakage current, threshold voltage) are approaching values obtained in devices processed in more conventional substrates. Current collapse free transistors with promising RF performances have been obtained. Some other devices present current collapse, however the data analysis indicate that the mechanism responsible for the collapse seems not to be related to the bulk material, but more to the surface. This is a very important result because, if confirmed, it will rule out the most critical aspect that was forecast at the beginning of the project: bulk-related trap phenomena. The reliability aspects of hybrid substrates devices have been then investigated. A “short-term” step-stress plan with a maximum drain-to-source voltage of 30 V on several wafers has been carried out. No degradation has been observed in almost all tested devices but some devices exhibit remarkable degradation at relatively low VDS voltages. On selected wafers, the step-stress test has been also extended up to VDS = 50 V and, surprisingly, devices exhibited very excellent reliability performances, showing no degradation. A deep investigation of traps responsible of GaN HEMTs parasitic effects has been reported in the second part of this work. This study has been performed on AlGaN/GaN devices grown on conventional SiC substrate in the frame of the European project KorriGaN (Key ORganisation for Research on Integrated circuit in GaN technology), since the fabrication technology is more mature. By the way, the same considerations could be extended to composite substrate devices as well. In general, effective passivation of surface traps has been achieved, and good results have been achieved by KorriGaN wafers, with reduced decrease of the drain current during pulsed operation. Average current slump level is ~80% (ideal value is 100%). The dependence of the current collapse effects on material, field-plate and device geometry has been also studied, demonstrating that field plate has a strong on collapse only when a high density of surface traps is present. The study of the dependence of KINK effect on device geometry, together with measurements as a function of temperature, photocurrent spectroscopy, Deep Level Transient Spectroscopy (DLTS) and cathodoluminescence (CL) spectroscopy within a Scanning Electron Microscope (SEM) have shown that the kink is due to the presence of deep levels within the undoped GaN layer, possibly related with the observation of yellow luminescence in the CL spectra." @default.
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• W12067671 date "2008-01-01" @default.
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• W12067671 title "Hybrid substrates employment for the development of Gallium Nitride HEMTs: study of reliability and failure modes" @default.
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