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- W1235933735 abstract "Publisher Summary This chapter reviews the basic thermodynamic concepts that lead to a better understanding of: (1) the epitaxial processes used for the growth of semiconductor materials and structures used for photonic and electronic devices, and (2) the properties of the materials produced by these techniques. All the epitaxial growth processes are driven by the free energy difference between the nutrient and solid phases. Thus, thermodynamics determines the maximum possible growth rate. It is used to describe the solid composition in terms of the independent growth parameters, for the near-equilibrium liquid phase epitaxial growth techniques as well as for the vapor phase techniques operating with a very large supersaturation, such as the organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). Since thermodynamics controls the stoichiometry of the solids produced epitaxially, it also controls the densities of the native defects as well as the deep levels acting as non-radiative recombination centers. The solid composition in alloys is thermodynamically controlled, thus the parameters such as lattice constant and energy band gap are determined by the thermodynamic factors." @default.
- W1235933735 created "2016-06-24" @default.
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- W1235933735 date "2004-01-01" @default.
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- W1235933735 title "Thermodynamics of modern epitaxial growth processes" @default.
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