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- W123622010 abstract "Abstract GaAs InP and GaAs GaP heterostructures have lattice mismatches with nearly the same absolute value but opposite sign; therefore, they are ideal candidates for investigating the role of the strain sign on the strain relaxation mechanisms. (001) oriented GaAs InP and GaAs GaP heterostructures have been grown by metallorganic vapour phase epitaxy and the strain release has been studied by high resolution X-ray diffraction. The residual strain parallel to the interface has been determined as a function of the layer thickness for both the systems and the results compared with the theoretical predictions of the equilibrium model. The present findings, together with those previously obtained in InP GaAs structures grown by atomic layer epitaxy, allowed some general conclusions on the strain relaxation mechanisms to be achieved." @default.
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- W123622010 date "1996-03-01" @default.
- W123622010 modified "2023-09-25" @default.
- W123622010 title "Lattice strain relaxation in and heterostructures" @default.
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- W123622010 doi "https://doi.org/10.1016/0038-1098(95)00734-2" @default.
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