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• W124175969 abstract "In the field of deep submicron devices, silicon-on-insulator CMOS technology offers many interesting advantages compared to bulk CMOS technology. However, the device characteristics of SOI MOSFETs are significantly different from that of bulk MOSFETs due to several parasitic effects introduced by floating body. In order to gain better knowledge of the SOI device characteristics as well as to provide accurate circuit models for SOI circuit design, good circuit model and accurate model parameters covering all aspects of the MOSFET physics must be available to the device engineers and circuit designers. Silicon-on-Sapphire (SOS) MOSFET is a special class of SOI MOSFET which has numerous advantages that make it very attractive for use in CMOS RF circuits. The aims of the study reported in this thesis are: (a) to establish an accurate BSIM-like model for SOS MOSFETs, (b) to develop efficient and accurate procedures for extracting values of the model parameters established in (a) from small-signal measurement, (c) to establish a small-signal measurement instrumentation to collect data for model parameter extraction and (d) to study transient effects associated with the isolated body in SOS MOSFET's using the same small-signal measurement setup. In this work, small-signal channel conductance as a function of dc drain and gate bias is used to study the behaviour of SOS MOSFETs in place of the conventional dc I-V data. Small-signal conductance measurement was chosen because of its simplicity and accuracy. The measurement can be measured at zero source-drain bias eliminating drain bias effects on the measurement of gate-controlled model parameters. A simple yet accurate method for the measurement of the small-signal conductance of standard test transistors using a standard LCR meter is developed for this purpose. The BSIM3V3 model is modified to include parameters for characterizing the effects of the floating body on the electrical characteristics of the transistors. A novel sequence of local and global optimization procedures was used to extract the BSIM parameters from the small-signal conductance data. A critical review of the SPICE and BSIM based models for bulk and SOS device application is also included. Due to the fact that SOS transistor has an isolated body whose potential is floating when the gate electrode is pulsed, relatively slow transients in the form of drain current overshoot and undershoot can be observed during switching. These are attributable to the combined effects of the floating body potential and the finite rate generation and recombination of majority carriers. In this work these transients were studied using the same small-signal conductance and gate-to-source/drain capacitance using the same small-signal instrumentation. For the case of the turn-off, a new method of extraction of carrier generation lifetime is developed based on the creation and subsequent collapse of a space charge region in the isolated body. Numerical simulation of this transient based on a 2-D device simulator was used to verify the extraction method." @default.
• W124175969 created "2016-06-24" @default.
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• W124175969 date "2003-01-01" @default.
• W124175969 modified "2023-09-24" @default.
• W124175969 title "Silicon-on-sapphire MOSFET parameter extraction by small-signal measurement" @default.
• W124175969 hasPublicationYear "2003" @default.
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