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• W128222392 abstract "The difference between the chemical potentials of the electrons, respectively the Fermi levels in two phases in contact, produces space charge layers at the phase boundaries. At the phase boundary between a semiconductor and a gas, the gas particles are bounded and an electronic equilibrium between adsorbed particles and the solid is produced (chemisorption). The production of a space charge barrier layer at the surface of the solid, which is a consequence of this equilibrium may explain many observed effects involving the interaction of gases and semiconductors. The application of these considerations is limited to the temperature range in which an electron exchange between gas and semiconductor is possible, however, the transportation of ionic impurities in the semiconductor does not take place. The following effects related to chemisorption on semiconductors are tretaed: Change of conductivity, variation of the electron work function, kinetics of chemisorption and influence on luminescence and the electro-optical properties. In the following discussion connections with other papers were maintained, and some arguments, as well as possible extensions of the theoretical foundation, were offered." @default.
• W128222392 created "2016-06-24" @default.
• W128222392 creator A5042999418 @default.
• W128222392 date "1954-01-01" @default.
• W128222392 modified "2023-10-17" @default.
• W128222392 title "Randschichteffekte an der Grenzfläche Halbleiter/Vakuum und Halbleiter/Gasraum" @default.
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• W128222392 doi "https://doi.org/10.1007/bfb0116874" @default.
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