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- W129131606 abstract "Many applications have been suggested for the emerging technology of CVD diamond and many are dependent upon achieving specific microstructures or other objectives such as good adhesion, surface smoothness, high levels of crystallographic perfection or single crystal growth. Some of these have been achieved, e.g. optically smooth nanocrystalline coatings, however others remain elusive, e.g. large area heteroepitaxial single crystal growth. It is well known that the highest nucleation densities are routinely achieved by the simple expedient of polishing or otherwise abrading the substrate with diamond powder, or by previously depositing carbon or carbon precursors on the surface to be coated and it has been suggested that diamond nucleates preferentially on carbide surfaces. The careful analysis of diamond polished silicon suggests that the principal nucleation sites for diamond are those covered with a disordered carbon and that carbide formation itself is not as important. Various reaction mechanisms and models have been suggested, many concentrating on the nature of the principal additive specie and its gas phase chemistry. Two most commonly discussed models are based on acetylene or the methyl radical and the experimental data supporting the methyl radical hypothesis is reviewed. It is suggested that the dominant growth axis is dependent on experimental conditions, that the rate determining step is the creation of a surface radical site and that the dominant low index growth axis is the [110]. A methyl radical based mechanism for growth along this axis is proposed." @default.
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- W129131606 date "1991-01-01" @default.
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- W129131606 title "A Chemical Perspective on the Nucleation and Growth of Diamond from Hydrocarbons" @default.
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- W129131606 doi "https://doi.org/10.1016/b978-0-444-89162-4.50009-9" @default.
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