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- W13157410 abstract "CdTe solar cells were fabricated by depositing CdTe films on CdS/SnO2/glass substrates using metalorganic chemical vapor deposition (MOCVD) with varying Te/Cd mole ratio in the growth ambient. Auger electron spectroscopy (AES) revealed a high degree of atomic interdiffusion at the CdS/CdTe interface when the CdTe films were grown in the Te‐rich conditions. The open‐circuit voltage of 780 mV and cell efficiency of 11.9% were found to be the highest for the Te‐rich growth ambient, suggesting that the enhanced interdiffusion in these cells leads to the gradual transition from CdS to CdTe and fewer interface states. The high effective life‐time of the charge carriers in the bulk material, measured by time‐resolved photoluminescence, also supports the hypothesis of reduced defect density in the CdTe cells grown in the Te‐rich ambient. In order to eliminate possible Cl‐related defects in CdTe, Rapid Thermal Processing (RTP) of CdS/CdTe films was done to achieve grain regrowth without the use of CdCl2 as a fluxing agent. A cell efficiency of 10.7% was recorded using RTP. Finally, a set of experiments and some model simulations were performed to determine losses due to absorption and reflection in CdS/CdTe solar cells as a function of the CdS layer thickness." @default.
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- W13157410 date "1994-01-01" @default.
- W13157410 modified "2023-10-18" @default.
- W13157410 title "Investigation of efficiency limiting defects and rapid thermal processing of MOCVD grown CdTe solar cells" @default.
- W13157410 doi "https://doi.org/10.1063/1.45765" @default.
- W13157410 hasPublicationYear "1994" @default.
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