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- W132593452 abstract "It has been shown that p- and n-type doped diamond films and combinations can be applied for a variety of electronic and optoelectronic applications. To achieve success, a comprehensive knowledge of doping technology and related analysis techniques are required. For p-type doping, the impurity boron is easily incorporated into both natural and synthesized diamond, whereas n-type diamond, which is not present in nature, has been recently developed by phosphorus doping. Progress in p- and n-type doping of diamond semiconductors has stimulated extensive research on the various types of p-n junction devices, bringing diamond closer to practical applications for future electronics. In this chapter, details of homoepitaxy growth and impurity doping in single-crystal diamond are summarized, especially in n-type diamond by phosphorus doping. Diamond growth and doping, electronic properties, electrical conductivity, contact metallization, and junction applications are described below." @default.
- W132593452 created "2016-06-24" @default.
- W132593452 creator A5026744994 @default.
- W132593452 date "2014-01-01" @default.
- W132593452 modified "2023-09-25" @default.
- W132593452 title "Conductivity and Impurity Doping on Single Crystal Diamond" @default.
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- W132593452 doi "https://doi.org/10.1016/b978-0-08-096527-7.00049-0" @default.
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