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- W13265386 abstract "InGaAs lattice-matched to InP is an excellent candidate for applications requiring high mobility and conductivity. Schottky junctions on InGaAs exhibit barriers (4)0 in the neighborhood of 0.25eV and high mobility contributes to the low n+ sheet resistances of 2.0-5 2/0 for 4.tm n+ InGaAs layers (n, = 1.5x10' /cm , 1.1.n = 1800cm /voltsec) grown with our in-house Metalorganic Vapor Phase Epitaxy (MOVPE) system. This material is therefore well suited for highperformance THz diodes since it provides low Ob, as necessary for low required LO power and has low specific contact resistance needed for reduced losses and 14h-frequency operation. The design, material growth, fabrication, and characterization of InGaAs planar mixers is reported. These mixers demonstrated a state-of-the-art performance of 26IK DSB noise temperature (Tmix) with a corresponding conversion loss (L mix) of 5.4dB at LO, RF, and IF frequencies of 92GHz, 920Hz 1.4GHz, and 1.4GHz respectively. Planar mixer diodes were produced using a novel chemical dice process that performs all lithography and wafer thinning steps before airbridge fabrication, thus greatly reducing the possibility of damage to airbridge and anodes. The mixer diodes were quasi-optically tested while mounted on spiral antennae." @default.
- W13265386 created "2016-06-24" @default.
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- W13265386 date "1995-03-01" @default.
- W13265386 modified "2023-09-23" @default.
- W13265386 title "Low-Noise MOVPE-Grown Planar InGaAs Mixer Diodes" @default.
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