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- W133060854 abstract "Rapid processing implies processing under transient conditions. In many processes, this includes reactions between gas phase reactants and the wafer surface. These interactions almost always begin with adsorption (and desorption in many cases). We present a three-dimensional extension of a recently developed transient transport and reaction model and numerical implementation for low pressure processes. Atomic layer deposition (ALD) is used to demonstrate the model’s ability to account for rapid transients [1–5]. At the wafer surface, the transport model is given by the Boltzmann transport equation for gas dynamics, which has no tunable parameters [6]. The surface reaction model is based on reversible Langmuir expressions and is capable of providing non-linear models [7]. The dimensionless kinetic parameter values for adsorption, desorption, and reaction are chosen for demonstration purposes [5]." @default.
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- W133060854 date "2002-01-01" @default.
- W133060854 modified "2023-09-27" @default.
- W133060854 title "Transient Transport and Reactant-Wafer Interactions: Adsorption and Desorption" @default.
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