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• W133477545 abstract "Short period Si/Ge superlattices are new semiconductor materials whose band structure and consequently whose electrical and optical properties can be changed in a wide range. New device applications are expected on the basis of such layered structures | 1 |. Recent progress on low temperature molecular beam epitaxial growth | 2,3,4,5 | allows the realization of high quality Si/Ge superlattices with sharp interfaces and individual layer thicknesses of only a few monolayers. The large lattice mismatch of more than 4 % between the two constituents, however, still causes major problems for the achievement of sufficient total thickness, which is required for the application of new superlattice effects. The concept of strain symmetrization with certain buffer layers | 4,6 | might be one way to overcome this problem. Various basic properties of such new superlattice materials can be studied, however, also in relatively thin Si/Ge superlattices grown on Si, Ge, and SiGe substrates. In the present article results, obtained mainly in our group are reviewed. The excellent work of various other research groups from all over the world can be found in the literature | 7 |." @default.
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• W133477545 date "1989-01-01" @default.
• W133477545 modified "2023-09-27" @default.
• W133477545 title "Phonons and Optical Properties of Si/Ge Superlattices" @default.
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• W133477545 doi "https://doi.org/10.1007/978-1-4757-6565-6_10" @default.
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