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- W133644679 abstract "For the preparation of very smooth epitaxial YBa 2 Cu 3 O 7 — films on silicon substrates, Yttrium-stabilized zirconia (YSZ) buffer layers turn out to serve as effective barriers against interdiffusion and show an epitaxial relationship with the silicon (100) single-crystal as well as the superconductor. To accomplish good epitaxial growth of YSZ on silicon the amorphous native oxide has to be removed by a careful chemical etching prodecure. To prevent the reactive surface from contamination it was passivated by a thin oxide layer which decomposes just when the process temperature of 800 °C is approached. YSZ — films evaporated by electron gun on so prepared substrates showed an excellently smooth and crystalline surface." @default.
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- W133644679 date "1992-01-01" @default.
- W133644679 modified "2023-10-14" @default.
- W133644679 title "Epitaxial YBa2Cu3O7 — Films on Silicon with Epitaxial Buffers of Yttrium-Stabilized Zirconia" @default.
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