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- W135207195 abstract "Residual mechanical stress is currently among the most important parameters for improving processing yields and it will become increasingly important in view of the targeted decrease in the wafer or thin film thicknesses to reduce processing costs. A technique that is intensively used for analysing stress states at the micrometer scale in semiconductors is micro-Raman spectroscopy. Several stress-tensor components can be obtained separately using polarized laser light for the μ-Raman measurements or average stresses when using unpolarized light. We have found inhomogeneous stress distributions including local peak compressive and tensile stresses at (sub)grain boundaries and in areas with high concentrations of extended lattice defects. These stresses most probably form during the different heating and cooling processes of the multicrytalline silicon block and ribbon casting or during the laser melting and re-crystallization of amorphous silicon layers on thermally mismatched glass substrates. The possible mechanisms of stress formation and relaxation are discussed." @default.
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- W135207195 date "2008-11-01" @default.
- W135207195 modified "2023-09-23" @default.
- W135207195 title "Residual Stress Measurements in Multicrystalline Silicon Bulk and Thin Film Solar Cells Using Micro-Raman Spectroscopy" @default.
- W135207195 doi "https://doi.org/10.4229/23rdeupvsec2008-3av.1.24" @default.
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