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- W13727895 abstract "We constructed an in-situ Raman measurement system, which enables us to characterize various features in semiconductors in an environment of flowing gas or a low pressure. Using this system, we characterized GaP/Si structures fabricated by the chloride vapor-phase epitaxy method. The peak shift of the measured transversal optical phonon indicated that the compressive strain exists at 700°C in GaP film that has a thickness of 300nm on a Si(111) substrate, and the misfit strain in GaP film is about 0.3% compressive one. This strain was smaller than that expected in the no dislocations' case. Therefore, misfit dislocations were introduced in GaP film before the thickness was up to 300nm. However, all the misfit strain was not relaxed when the thickness of GaP layer was 300nm. On the other hand, the measurement of the sample whose thickness was 1μm denoted that almost all misfit strain was relaxed during or just after growth." @default.
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- W13727895 date "1994-01-01" @default.
- W13727895 modified "2023-10-02" @default.
- W13727895 title "A New Raman System for In-Situ Observation of Semiconductor Crystal Growing in Flowing Gas" @default.
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- W13727895 doi "https://doi.org/10.1016/b978-0-444-81889-8.50024-9" @default.
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