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- W137462120 abstract "A substrate structure for an InP-based semiconductor device having an InP-based film is disclosed. The substrate structure includes a substrate region having a light-weight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice matched at its one end to the GaAs layer and substantially lattice matched at its opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region and the InP-based device. 1 fig." @default.
- W137462120 created "2016-06-24" @default.
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- W137462120 date "1988-09-30" @default.
- W137462120 modified "2023-09-27" @default.
- W137462120 title "Improved substrate structures for InP-based devices" @default.
- W137462120 hasPublicationYear "1988" @default.
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