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- W137643922 abstract "Recent results from the United States Department of Energy (DOE) Thin-Film Photovoltaic Device Program are presented. The program which is managed by the Solar Energy Research Institute (SERI) encompasses materials and device research on highly absorbing compound semiconductors including cuInSe/sub 2/, CdTe, Cu /SUB 2-x/ Se, Zn/sub 3/P/sub 2/, ZnSiAs/sub 2/, and Cu/sub 2/S. Excitement in the program has been generated by recent progress in the (Cd,Zn)S/ CuInSe/sub 2/ device area where an efficiency of 10.6% on a 5 ..mu..m thick device has been reported. Other highlights include deposition of a hybrid CdS/Cu/sub 2/S device (evaporated CdS, sputtered Cu/sub 2/S) with a 7.1% AM1 efficiency, and of a 3.94% AM1 efficiency all-sputtered CdS/Cu/sub 2/S cell. AM1 efficiencies exceeding 5% are reported for CdTe Schottky barrier and heterojunction devices, and for a CdS/Cu /SUB 2-x/ Se heterojunction. AM1 efficiencies exceeding 4% are reported for Mg/Zn/sub 3/P/sub 2/ Schottky barrier cells. Future research emphasis is outlined." @default.
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- W137643922 date "1982-09-01" @default.
- W137643922 modified "2023-09-24" @default.
- W137643922 title "Progress in polycrystalline thin-film photovoltaic device research: the DOE/SERI program" @default.
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