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- W140675252 endingPage "395" @default.
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- W140675252 abstract "The molecular beam epitaxial technique (MBE) has been developed over the past 20 years in response to the need for a crystal growth method capable of depositing very thin films of semiconductor materials with near-perfect surface morphology and near-perfect control of layer thicknesses, layer compositions, and doping levels needed for the fabrication of advanced semiconductor devices. “While the initial studies were carried out mainly on III-V compounds and their ternary and quaternary alloys, the technique has since found widespread application also for the growth of II-VI and IV-VI semiconducting compounds and alloys, as well as for the deposition of silicon and germanium films. Other applications involving the deposition of epitaxial metal films, dielectrics and superconductors have emerged recently and are being actively pursued in many laboratories." @default.
- W140675252 created "2016-06-24" @default.
- W140675252 creator A5059183731 @default.
- W140675252 date "1989-01-01" @default.
- W140675252 modified "2023-09-30" @default.
- W140675252 title "An Introduction to Molecular Beam Epitaxy" @default.
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- W140675252 doi "https://doi.org/10.1007/978-1-4613-0549-1_24" @default.
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