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• W14225148 abstract "A low-complexity but high-performance SiGe:C BiCMOS technology is realized by conventional simple LOCOS isolation and non-selective SiGe:C epitaxy with optimized impurity profiles. Stress-induced misfit dislocations found in the SiGe:C layer on LOCOS-patterned wafers were successfully eliminated by optimizing the epitaxial process. This, in combination with optimization of HBT impurity profiles, produced a 99% yield of 10000 parallel arrays with an f/sub Tmax/ of 101 GHz. The HBT has been successfully integrate in a 0.25 /spl mu/m CMOS with passive components, which is suitable for low-cost RF mixed-signal applications." @default.
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• W14225148 date "2004-11-22" @default.
• W14225148 modified "2023-09-27" @default.
• W14225148 title "101 GHz f/sub Tmax/ SiGe:C HBT integrated into 0.25 μm CMOS with conventional LOCOS isolation" @default.
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• W14225148 doi "https://doi.org/10.1109/essder.2004.1356524" @default.
• W14225148 hasPublicationYear "2004" @default.
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