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• W142825389 abstract "A great variety of radiation effects (the number of point defects, sputtering ratio, mixing, segregation, etc) depends critically on the value of energy deposition. In this work the energy deposition is simulated on the basis of a computer model of plural interactions for the case of argon ion incident on the (111) face of single crystal silicon. The initial energy of the normally incident ions is varied from 20 eV to 8 keV. The target is represented by a block of about 100 atoms. The interactions of atoms with each other and with the ion are taken into account by using a pairwise additive potential. The results obtained show a monotonic decrease for the fractional value of energy deposition with increasing initial energy of the incident ions. However, the value of energy deposition has a maximum in the energy range considered. The connection of these dependencies with other irradiation characteristics is discussed" @default.
• W142825389 created "2016-06-24" @default.
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• W142825389 date "1996-01-01" @default.
• W142825389 modified "2023-09-27" @default.
• W142825389 title "Calculation of the energy deposition value for argon ion beam bombarded silicon on the basis of the plural interaction model" @default.
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• W142825389 doi "https://doi.org/10.1016/b978-0-444-82334-2.50126-x" @default.
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