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- W1434707908 abstract "The driving force behind solution growth technologies as they are applied to semiconducting materials lies in their ability to remove the technological limitations for novel device concepts and structures imposed by the small number of available elemental and compound semiconducting substrates, and a limited number of lattice parameters and bandgaps. A slight mismatch between the lattice parameters of a substrate and epitaxial device layer will lead to the creation and propagation of dislocations from the initial growth interface into the device structure, leading to reduced device efficiency and performance. This chapter provides an introduction to crystal growth techniques: their technological significance, detailed configurations, and growth procedures. Comparisons of these techniques with other vapor and melt techniques are made in terms of crystal quality, composition, and uniformity. The materials considered are mainly the IV–IV materials, the III–V alloys, and the II–VI alloys. Space limitations preclude a complete chronological review of the experimental details of each growth process. The growth technologies are presented in a generalized manner, with specific materials or material systems discussed and results presented by way of examples. Many references are provided for the growth processes, materials systems, and specific devices, and applications." @default.
- W1434707908 created "2016-06-24" @default.
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- W1434707908 date "2007-01-01" @default.
- W1434707908 modified "2023-09-25" @default.
- W1434707908 title "METALLIC SOLUTION GROWTH TECHNIQUES" @default.
- W1434707908 doi "https://doi.org/10.1016/b978-044452232-0/50004-3" @default.
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