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• W1440568686 abstract "In this study, Ga-doped ZnO (GZO) nanosheets were grown on a glass substrate by using aqueous solution method. A GZO nanosheet metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the GZO nanosheets were 2.06µm and approximately 20nm, respectively. The EDX spectrum determined that the Ga-doped sample contains approximately 1.35% at%. The UV-to-visible rejection ratio of the device is approximately 42 when biased at 1V, and the fabricated UV PD is visible-blind with a sharp cutoff at 370nm. The photo-current and dark-current constant ratio of the fabricated PD was approximately 14193 when biased at 1V. The transient time constants measured during the rise time and fall time were 2.45s and 4.0s, respectively. Display Omitted Ga-doped ZnO nanosheets were grown on a glass substrate.A GZO nanosheets ultraviolet photodetector was fabricated.The proposed GZO nanosheets UV photodetector has a high fast rise/fall time characteristics." @default.
• W1440568686 created "2016-06-24" @default.
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• W1440568686 date "2015-12-01" @default.
• W1440568686 modified "2023-09-23" @default.
• W1440568686 title "Ultraviolet photodetectors with Ga-doped ZnO nanosheets structure" @default.
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• W1440568686 doi "https://doi.org/10.1016/j.mee.2015.07.009" @default.
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