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- W144404476 abstract "The noise properties of 6H-SiC ion implanted p-n diodes have been investigated. The noise measurements were performed at room temperature under forward bias and frequency range from 10 to 100 KHz. The studied diodes have three different areas A1, A2, and A3, (with A1<A2<A3). The effect of the geometry on the noise properties of these junctions was found to be depending on the origin of the noise at low and high current densities. Two different noise behaviors have been observed, and two relationships between the noise spectral density SI(f) and the area (A) have been found to describe the noise behavior observed in these junctions." @default.
- W144404476 created "2016-06-24" @default.
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- W144404476 date "2000-01-01" @default.
- W144404476 modified "2023-10-18" @default.
- W144404476 title "Impact of the geometry on the noise properties of the 6H-SiC diodes" @default.
- W144404476 doi "https://doi.org/10.1063/1.59997" @default.
- W144404476 hasPublicationYear "2000" @default.
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