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• W145483980 abstract "Rare earth (R) iron garnets (R3Fe5O12) have excellent properties for magnetic, magneto-optic and microwave applications. For magnetic bubble memory devices requiring single crystal films of several micrometer thickness an epitaxial technique had to be developed. The know-how concerning congruently melting non-magnetic garnet crystal growth from the melt for laser applications was used to grow gallium gadolinium garnet as suitable substrate crystals. On wafers of these crystals single crystal layers can be grown by liquid phase epitaxy (LPE) from very diluted high temperature solutions known from the flux growth of yttrium iron garnet (YIG) for microwave applications. Substrate crystals with garnet structure having a lattice constant in the range from 1.22 nm to 1.26 nm are now available [1]. This allows the growth of magnetic garnet layers with a wide variety of compositions to tailor the properties for various applications. LPE is a well suited process to study crystal growth phenomena, too. Some advantageous features of garnet LPE with respect to crystal growth will be discussed. Occasionally comparison to LPE of semiconductors is made." @default.
• W145483980 created "2016-06-24" @default.
• W145483980 creator A5039827671 @default.
• W145483980 date "1989-01-01" @default.
• W145483980 modified "2023-09-26" @default.
• W145483980 title "Liquid Phase Epitaxy of Garnets" @default.
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• W145483980 doi "https://doi.org/10.1007/978-1-4613-0549-1_25" @default.
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