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• W14772009 abstract "The possibility of growing multicomponent oxides by spatial atmospheric atomic layer deposition has been investigated. To this end, AlxZn1–xO films have been deposited using diethyl zinc (DEZ), trimethyl aluminum (TMA), and water as Zn, Al, and O precursors, respectively. When the metal precursors (i.e., TMA and DEZ) are coinjected in the deposition region, the Al/(Al + Zn) ratio can be accurately controlled by either varying the TMA flow to the reactor or the exposure time of the substrate to the precursors. A high doping efficiency level (up to 70%) is achieved in Al-doped ZnO, resulting in films with a high carrier density (5 × 1020 cm–3), low resistivity (2 × 10–3 Ω cm), and good optical transparency (>85%) in the visible range. The morphology of the films changes from polycrystalline, in conductive i-ZnO and Al-doped ZnO, to amorphous, in highly resistive Al-rich films. The unique combination of the fine tuning of the composition, morphology, and electrical properties of the films with high deposition rates (>0.2 nm/s) paves the way for spatial ALD as an emerging disruptive technique for the growth of multicomponent oxides over large areas." @default.
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• W14772009 date "2013-12-11" @default.
• W14772009 modified "2023-09-23" @default.
• W14772009 title "Spatial Atmospheric Atomic Layer Deposition of Al_<i>x</i>Zn_1–<i>x</i>O" @default.
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• W14772009 doi "https://doi.org/10.1021/am404137e" @default.
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