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- W1479946182 abstract "Abstract In the doping of epitaxial Si the gas phase is analyzed assuming thermodynamic equilibrium, and the equilibrium partial pressures of various atomic aggregates of arsenic and phosphorus are calculated. Boron, when present in the gas phase, is probably in the form of a subhydride (e.g., BH3. Equilibrium processes such as formation of a solid solution and condensation are discussed theoretically. Epitaxial Si is grown by the hydrogen reduction of SiCl4 using hydrides of boron, arsenic and phosphorus as dopant sources. The doping results indicate that the incorporation of these dopants in the epitaxial Si is independent of Si deposition rate and represents an equilibrium process. The concentration of boron in the epitaxial layer increases exponentially with temperature whereas the concentration of arsenic and phosphorus decreases with increasing temperature and the results are explained by an equilibrium solubility mechanism." @default.
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- W1479946182 date "1970-11-01" @default.
- W1479946182 modified "2023-09-28" @default.
- W1479946182 title "Doping of epitaxial silicon" @default.
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- W1479946182 doi "https://doi.org/10.1016/0022-0248(70)90063-1" @default.
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