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- W1480147768 abstract "Publisher Summary This chapter discusses the metalorganic chemical vapor deposition (MOCVD) of group III nitrides. In the past few years, MOCVD has evolved into a leading technique for the production of III–V compound semiconductor optoelectronic and electronic devices. For commercial GaN device applications, MOCVD has emerged as the leading candidate because of the achievement of super-bright blue light emitting diodes (LEDs) and the large scale manufacturing potential of the MOCVD technique. The majority of all GaN-based p–n junction LEDs typically employ an impurity-related transition for blue and green emission. MOCVD is a nonequilibrium growth technique, which relies on vapor transport of the precursors and subsequent reactions of group III alkyls and group V hydrides in a heated zone. The optimization of MOCVD growth is typically done by empirical studies of external parameters, such as growth temperature, V/III ratio, substrate tilt, and mass flow rates." @default.
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- W1480147768 date "1997-01-01" @default.
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- W1480147768 title "Chapter 2 Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides" @default.
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- W1480147768 doi "https://doi.org/10.1016/s0080-8784(08)63083-5" @default.
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