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• W1481641473 abstract "CO₂ laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 um.min -1 were ohtained for pulse energies of 7.5-30 mJ over diameters of 50-500 um with a Q-switched pulse width of -30 nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 f1I11/min) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/ AIN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate suhsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching." @default.
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• W1481641473 date "2004-09-01" @default.
• W1481641473 modified "2023-09-27" @default.
• W1481641473 title "High-Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates" @default.
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• W1481641473 hasPublicationYear "2004" @default.
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