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- W1481641921 abstract "The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found lo con sist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830nm wavelength up to data rates of 2.5Gbit/s." @default.
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- W1481641921 date "1988-09-01" @default.
- W1481641921 modified "2023-10-11" @default.
- W1481641921 title "HIGH-SPEED OPTICAL DETECTION UP TO 2.5Gbit/s WITH A DOUBLE POLYSILICON SELF-ALIGNED SILICON BIPOLAR TRANSISTOR" @default.
- W1481641921 doi "https://doi.org/10.1051/jphyscol:1988418" @default.
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