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- W1482464530 abstract "Specialized processes have been developed for high dose implant stripping (HDIS) because of the difficulty in removing the highly cross-linked and carbonized photoresist crust. This chapter focuses on plasma processing and wet processing. It describes the wet-only processing for post-implant photoresist stripping. Traditional plasma followed by wet processing has limitation due to the silicon loss, and all-wet processing has limitations due to the implant dose and energy creating a damaged crust layer that cannot easily be removed with standard processing chemicals. The chapter discusses the definition of high-dose implant, the formation of the crust, the methods to remove the crust and the bulk photoresist, the limitations of the processes plus newly developed methods to address these limitations. It also discusses some of the ongoing research for HDIS. Controlled Vocabulary Terms photoresists; silicon; solid-state plasma; wetting" @default.
- W1482464530 created "2016-06-24" @default.
- W1482464530 creator A5074443393 @default.
- W1482464530 creator A5085269640 @default.
- W1482464530 date "2010-12-20" @default.
- W1482464530 modified "2023-09-26" @default.
- W1482464530 title "High Dose Implant Stripping" @default.
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- W1482464530 doi "https://doi.org/10.1002/9781118071748.ch8" @default.
- W1482464530 hasPublicationYear "2010" @default.
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