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- W1483407933 abstract "High efficiency TPV GaSb and Ge based cells fabricated by a non‐toxic and inexpensive Zn‐diffusion technique have been developed. GaSb based cells optimised for operation with solar powered photon emitter allowed increasing the efficiencies up to 27–28% at black body temperature > 2000 K assuming 90% reflection of sub‐bandgap photons. Combination of the MOCVD technique or LPE growth and Zn diffusion from the gas phase allows fabricating Ge photocells on the base of the GaAs/Ge heterostructures, which are characterized by high photocurrent and open circuit voltage values. Efficiencies of 13% were obtained in GaAs/Ge TPV cells under the black‐body (1700–2100 K) irradiation assuming the achieved 90% reflection of sub‐bandgap photons." @default.
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- W1483407933 date "2004-01-01" @default.
- W1483407933 modified "2023-09-23" @default.
- W1483407933 title "Thermophotovoltaic Cells Based on Low-Bandgap Compounds" @default.
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- W1483407933 doi "https://doi.org/10.1063/1.1841922" @default.
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