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• W1484348548 abstract "Extremely uniform and high-density In0.15Ga0.85As/GaAs quantum wires (QWRs) were naturally formed on a (553)B-oriented GaAs substrate by molecular-beam epitaxy. The density of the QWRs is as high as 4.0×105 cm−1. The strong photoluminescence peak at λ=868 nm from the (553)B QWRs shows a large polarization anisotropy [p=(I∥−I⊥)/(I∥+I⊥)=0.22] and a very small full width at half maximum of 9.2 meV at 12 K. Based on the modulation-doped (553)B QWR structure, self-organized QWR field-effect transistors were fabricated (the channel along the QWRs’ direction). The devices demonstrate very good saturation characteristics and pinch-off behavior at room temperature. A maximum transconductance (gm) of 135 mS/mm is measured for 2 μm gate-length devices." @default.
• W1484348548 created "2016-06-24" @default.
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• W1484348548 date "2001-04-30" @default.
• W1484348548 modified "2023-09-25" @default.
• W1484348548 title "Self-organized (553)BIn0.15Ga0.85As/GaAs quantum-wire field-effect transistors" @default.
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• W1484348548 doi "https://doi.org/10.1063/1.1365949" @default.
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