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• W1484508755 abstract "Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto magnets. Many other new phenomena are being investigated for nanoelectronic memory, as described in Part Two of this book. It seems natural to ask whether these advances in memory devices could also translate into a new class of logic devices. What makes logic devices different from memory is the need for one device to drive another and this calls for gain, directionality, and input-output isolation as exemplified by the transistor. With this in mind we will try to present our perspective on how W and R devices in general, spintronic or otherwise, could be integrated into transistor-like switches that can be interconnected to build complex circuits without external amplifiers or clocks. We start with a very brief and oversimplified discussion of the most common switch used to implement digital logic based on complementary metal oxide semiconductor (CMOS) transistors. We will argue that a CMOS switch can be viewed as an integrated W-R unit having an input-output asymmetry that give it gain and directionality. Such a viewpoint uses the word ‘Write’ in an unconventional sense, and is not intended to provide any insight into the operation of CMOS switches, but rather as an aid to understanding how W and R units based on spins and magnets can be combined to build transistor-like switches. Next we will discuss the standard W and R units used for magnetic memory devices and present one way to integrate them into a single unit with the input electrically isolated from the output. But we argue that this integrated W-R unit would not provide the key property of gain. We will then show that the recently discovered giant spin Hall effect (GSHE) could be used to construct a W-R unit with gain and suggest other possibilities for spin switches with gain. We end with a brief evaluation of these alternative switches in terms of possible applications. A key metric is the energy-delay product and it appears that new materials and phenomena for W and R units will be needed to provide any improvement over standard CMOS switches. On the other hand the non-volatility and reconfigurability of switches based on magnets is a novel feature that could enable a new class of circuits very different from those currently possible." @default.
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• W1484508755 date "2014-11-28" @default.
• W1484508755 modified "2023-10-14" @default.
• W1484508755 title "What Constitutes a Nanoswitch? A Perspective" @default.
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• W1484508755 doi "https://doi.org/10.1002/9781118958254.ch02" @default.
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