FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1487177884> ?p ?o ?g. }

• W1487177884 abstract "Nanoimprint lithography (NIL) has been attracting attention from many industries because of its potential use in producing various nanostructure applications through a simple, lowcost, and high-throughput process. There are three primary types of NIL: thermal (T-NIL), UV-NIL, and room-temperature (RT-NIL). T-NIL has a heating and cooling process because thermoset or thermoplastic resins are usually used as T-NIL resins. When a thermoset resin is used, the mold is pressed on a substrate coated with the resin at room-temperature. During pressing, the mold and substrate are heated to harden the thermoset resin, and after cooling, the mold is separated from the substrate. It is slightly different with thermoplastic resin: in this case, the mold is pressed on a substrate coated with the resin at the resin's glass-transition temperature (Tg). The mold and substrate temperatures are then decreased and the mold is removed from the substrate. Si, SiO2/Si, and Ni molds are usually used as T-NIL molds. UV-NIL is a room-temperature process because UV-curable resins are used as UV-NIL resins. The UV-NIL mold is pressed on the substrate coated with UV-curable resin and then the substrate is irradiated with 365-nm UV through the mold. After this irradiation, the mold is separated from the substrate. This means that UV transmissive material must be used as UV-NIL mold material. Generally, a quartz mold is used as a hard mold, and a polydimethylsiloxane (PDMS) mold is used as a soft mold. RT-NIL can be performed without heating, cooling, or UV irradiation. In this process, the sol-gel materials, such as hydrogen silsesquioxane (HSQ), spin-on-glass (SOG), and sol-gel indium tin oxide (ITO), are used as RT-NIL resins. This process requires high pressure, so Si or SiO2/Si molds are usually used. What type of mold to use is one of the most important factors in nanoimprint lithography because the mold must come into direct contact with the replication material and the imprinted pattern resolution depends on the mold pattern resolution. The pattern is therefore typically fabricated by electron beam (EB) lithography to obtain a high resolution pattern, thus necessitating a mold repair process with high resolution. In photolithography mask repair, focused ion beam (FIB) etching is used to remove Cr opaque defects, and FIB chemical vapour deposition (CVD), using hydrocarbon precursor gas, is used to repair clear defects. Two types of defect occur in NIL molds protrusion and hollow defects which correspond to the opaque and clear defects in photomasks. However, unlike photomask patterns, the NIL relief-structure patterns are formed on a substrate surface. Therefore, we" @default.
• W1487177884 created "2016-06-24" @default.
• W1487177884 creator A5015305733 @default.
• W1487177884 creator A5064185325 @default.
• W1487177884 date "2011-12-02" @default.
• W1487177884 modified "2023-10-18" @default.
• W1487177884 title "Repairing Nanoimprint Mold Defects by Focused-Ion-Beam Etching and Deposition" @default.
• W1487177884 cites W1985028348 @default.
• W1487177884 cites W1988723038 @default.
• W1487177884 cites W1992790986 @default.
• W1487177884 cites W1999036127 @default.
• W1487177884 cites W2003147326 @default.
• W1487177884 cites W2003483250 @default.
• W1487177884 cites W2005485153 @default.
• W1487177884 cites W2016050240 @default.
• W1487177884 cites W2022948920 @default.
• W1487177884 cites W2027658025 @default.
• W1487177884 cites W2027830992 @default.
• W1487177884 cites W2029422697 @default.
• W1487177884 cites W2030665210 @default.
• W1487177884 cites W2034414098 @default.
• W1487177884 cites W2038993948 @default.
• W1487177884 cites W2048323554 @default.
• W1487177884 cites W2051762551 @default.
• W1487177884 cites W2057180474 @default.
• W1487177884 cites W2057356230 @default.
• W1487177884 cites W2062047511 @default.
• W1487177884 cites W2062074587 @default.
• W1487177884 cites W2065399906 @default.
• W1487177884 cites W2065752058 @default.
• W1487177884 cites W2067117263 @default.
• W1487177884 cites W2069386846 @default.
• W1487177884 cites W2081528453 @default.
• W1487177884 cites W2085285825 @default.
• W1487177884 cites W2085552831 @default.
• W1487177884 cites W2091754172 @default.
• W1487177884 cites W2093892927 @default.
• W1487177884 cites W2098686532 @default.
• W1487177884 cites W2132694229 @default.
• W1487177884 cites W2138368127 @default.
• W1487177884 cites W2145913863 @default.
• W1487177884 doi "https://doi.org/10.5772/21483" @default.
• W1487177884 hasPublicationYear "2011" @default.
• W1487177884 type Work @default.
• W1487177884 sameAs 1487177884 @default.
• W1487177884 citedByCount "0" @default.
• W1487177884 crossrefType "book-chapter" @default.
• W1487177884 hasAuthorship W1487177884A5015305733 @default.
• W1487177884 hasAuthorship W1487177884A5064185325 @default.
• W1487177884 hasBestOaLocation W14871778841 @default.
• W1487177884 hasConcept C100460472 @default.
• W1487177884 hasConcept C145148216 @default.
• W1487177884 hasConcept C151730666 @default.
• W1487177884 hasConcept C159985019 @default.
• W1487177884 hasConcept C161866238 @default.
• W1487177884 hasConcept C171250308 @default.
• W1487177884 hasConcept C178790620 @default.
• W1487177884 hasConcept C185592680 @default.
• W1487177884 hasConcept C192562407 @default.
• W1487177884 hasConcept C2779227376 @default.
• W1487177884 hasConcept C2780566776 @default.
• W1487177884 hasConcept C2816523 @default.
• W1487177884 hasConcept C64297162 @default.
• W1487177884 hasConcept C86803240 @default.
• W1487177884 hasConceptScore W1487177884C100460472 @default.
• W1487177884 hasConceptScore W1487177884C145148216 @default.
• W1487177884 hasConceptScore W1487177884C151730666 @default.
• W1487177884 hasConceptScore W1487177884C159985019 @default.
• W1487177884 hasConceptScore W1487177884C161866238 @default.
• W1487177884 hasConceptScore W1487177884C171250308 @default.
• W1487177884 hasConceptScore W1487177884C178790620 @default.
• W1487177884 hasConceptScore W1487177884C185592680 @default.
• W1487177884 hasConceptScore W1487177884C192562407 @default.
• W1487177884 hasConceptScore W1487177884C2779227376 @default.
• W1487177884 hasConceptScore W1487177884C2780566776 @default.
• W1487177884 hasConceptScore W1487177884C2816523 @default.
• W1487177884 hasConceptScore W1487177884C64297162 @default.
• W1487177884 hasConceptScore W1487177884C86803240 @default.
• W1487177884 hasLocation W14871778841 @default.
• W1487177884 hasOpenAccess W1487177884 @default.
• W1487177884 hasPrimaryLocation W14871778841 @default.
• W1487177884 hasRelatedWork W1964411686 @default.
• W1487177884 hasRelatedWork W2068948723 @default.
• W1487177884 hasRelatedWork W2076358343 @default.
• W1487177884 hasRelatedWork W2082870908 @default.
• W1487177884 hasRelatedWork W2146284129 @default.
• W1487177884 hasRelatedWork W2321841960 @default.
• W1487177884 hasRelatedWork W2522714860 @default.
• W1487177884 hasRelatedWork W2596721096 @default.
• W1487177884 hasRelatedWork W2892848358 @default.
• W1487177884 hasRelatedWork W4232213555 @default.
• W1487177884 isParatext "false" @default.
• W1487177884 isRetracted "false" @default.
• W1487177884 magId "1487177884" @default.
• W1487177884 workType "book-chapter" @default.