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- W1487196268 abstract "Hysteretic switching with a sub- <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>kT/q</i> steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.52</sub> Ti <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.48</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high- <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>k</i> dielectric (HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub- <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>kT/q</i> switching due to FE negative capacitance is observed not at low currents, but in strong inversion ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}_{d}sim $ </tex-math></inline-formula> 100 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu text{A}/mu text{m}$ </tex-math></inline-formula> ). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau–Devonshire theory and the Landau–Khalatnikov equation." @default.
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- W1487196268 date "2015-12-01" @default.
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- W1487196268 title "Sub-<i>kT/q</i> Switching in Strong Inversion in PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Gated Negative Capacitance FETs" @default.
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