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- W1488335218 abstract "Forward and reverse current-voltage characteristics of the Pt Schottky contacts on modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures were investigated. The barrier height of 0.94 eV and the ideality factor of 1.4 were obtained for the sample with the Si-doping level of 7.5 /spl times/ 10/sup 17/ cm/sup -3/ in the top Al/sub 0.22/G/sub 0.78/N barrier layer. The barrier height is lower and the ideality factor is larger for the samples with higher Si-doping level in the barrier. The reverse current mechanism are also different for the samples with different doping level of the Al/sub 0.22/Ga/sub 0.78/N barrier. It is suggested that the interfacial properties are crucial to the current-voltage characteristics of the samples. Capacitance-frequency measurement indicates that the density of the metal-semiconductor interfacial states are higher for the samples with higher Si-doping level in the barrier. It is thought that the chemical properties of the Al/sub 0.22/Ga/sub 0.78/N surface are influenced by the Si-doping level of Al/sub 0.22/Ga/sub 0.78/N, resulting in the difference in Pt/Al/sub 0.22/Ga/sub 0.73/N interfacial properties." @default.
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- W1488335218 date "2005-08-25" @default.
- W1488335218 modified "2023-09-27" @default.
- W1488335218 title "Properties of Pt Schottky contacts on modulation-doped Al/sub x/Ga/sub 1-x/N/GaN heterostructures" @default.
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- W1488335218 doi "https://doi.org/10.1109/icsict.2001.982107" @default.
- W1488335218 hasPublicationYear "2005" @default.
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