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- W1488403745 abstract "We have investigated the effects of implantation and thermal annealing upon the photoluminescence observed in a-Si/sub 3/N/sub 4/ films prepared by the low-pressure chemical vapor deposition (LPCVD) method, in order to explore the correlation between the PL and the defects induced by ion-implantation and thermal annealing." @default.
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- W1488403745 date "2002-11-27" @default.
- W1488403745 modified "2023-09-23" @default.
- W1488403745 title "Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films" @default.
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- W1488403745 doi "https://doi.org/10.1109/iseim.1998.741702" @default.
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