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• W1489090838 abstract "We report the composition- and gate voltage-induced tuning of transport properties in chemically synthesized Bi2(Te1–xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi2(Te1–xSex)3 nanoribbons when x is greater than ∼10%. In Bi2(Te1–xSex)3 nanoribbons with x ≈ 20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thicknesses around or larger than 100 nm, indicating significantly enhanced contribution in transport from the gapless surface states." @default.
• W1489090838 created "2016-06-24" @default.
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• W1489090838 date "2013-03-08" @default.
• W1489090838 modified "2023-10-18" @default.
• W1489090838 title "Ambipolar Surface Conduction in Ternary Topological Insulator Bi₂(Te_1–<i>x</i>Se_<i>x</i>)₃ Nanoribbons" @default.
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• W1489090838 doi "https://doi.org/10.1021/nn304684b" @default.
• W1489090838 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/23441571" @default.
• W1489090838 hasPublicationYear "2013" @default.
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