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- W1489792675 abstract "High-voltage semiconductor devices (>300V) are crucial components in a wide variety of applications, the most important of which include motor control, switch mode power supplies, and power factor correction (PFC). Traditionally this application space has been dominated by bipolar-type silicon devices such as the P-I-N diode, power bipolar transistor (BJT), and insulated gate bipolar transistor (IGBT). Recently, this dominance has been challenged by the commercial introduction of advanced high-voltage unipolar devices such as the silicon superjunction MOSFET (SJ/spl I.bar/MOSFET) and the silicon-carbide Schottky barrier diode (SiCSBD). In addition, there is increasing interest in unipolar high-voltage switching devices based on wide-bandgap materials. This paper reviews the current status and discusses future trends of these competing high-voltage semiconductor device technologies in terms of the fundamental physics, device electrical characteristics, and relevant manufacturing issues." @default.
- W1489792675 created "2016-06-24" @default.
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- W1489792675 date "2005-01-01" @default.
- W1489792675 modified "2023-09-27" @default.
- W1489792675 title "High-voltage semiconductor devices: status and trends" @default.
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- W1489792675 doi "https://doi.org/10.1109/bipol.2005.1555205" @default.
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