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• W1489798979 abstract "There is a considerable interest in the use of doped metal oxides in the research and development of new materials and device applications, such as transparent conducting oxides (TCOs), thermographic phosphor, and protective coatings, among others. The present work deals with two promising metal oxides, namely, zinc oxide and titanium dioxide. These materials have gained substantial interest in the research community due to their usage in a wide variety of potential applications.Zinc oxide is a II-VI compound semiconductor with a wide band gap of 3.37 eV at room temperature. Its wide band gap makes it suitable for LED and LASER applications. Al-doped ZnO is emerging as a possible replacement of indium tin oxide films as TCOs due to its low cost, high electrical conductivity, high optical transparency and chemical stability. Based on their potential applications many researchers have explored a variety of deposition techniques to judge their industrial suitability. Metalorganic chemical vapor deposition (MOCVD) was used in the present work it is a promising method for the development of un-doped and doped zinc oxide (ZnO) films. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. These precursors are inexpensive, so low-cost films can be achieved. The amount of Al doping can be controlled by varying the gas flow rate. Well–ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 µm thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 mcm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs.The second material investigated in this work was un-doped and doped titanium dioxide (TiO2) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO2 thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission spectra indicate that the red characteristic emission of TiO2: Eu3+ due to electric dipole transition occurring after ultraviolet excitation is the strongest. The decay time of the phosphorescence after UV excitation with a Nd:YAG laser (355 nm, f=10Hz) is temperature dependent in the range from 200°C up to 400°C. The results demonstrate that anatase doped europium (III) can be considered as a thermographic phosphor in this temperature regime. Finally, it has been found that the lifetime show a significant dependency on europium concentration.Titanium dioxide films are also interesting as protective coating, thus the development of rutile phase of titanium dioxide films on stainless steel substrates as protective coatings were investigated. Generally the rutile phases of TiO2 thin films do not adhere well on stainless steel substrates. In order to improve the adhesion, stainless steel substrates were first coated with titanium films using cathodic vacuum arc deposition. Then these titanium coatings were partially transformed to the rutile phase of titanium dioxide by thermal oxidation. The presence of the rutile phase of titanium dioxide and metallic titanium were confirmed by XRD. Cavitation erosion was used for the first time to investigate the adhesion properties of these coatings. Cavitation erosion tests confirmed that rutile films with a Ti inter layer are well adherent to stainless steel substrates and protect the substrate from erosion. The total mass loss of the thermally oxidized samples of Ti coated stainless steel was found around 3.5 times lower than of the uncoated samples." @default.
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• W1489798979 date "2011-08-24" @default.
• W1489798979 modified "2023-09-23" @default.
• W1489798979 title "Functional doped metal oxide films" @default.
• W1489798979 hasPublicationYear "2011" @default.
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