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- W1490052676 abstract "A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (Ron,sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 m??mm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior ?Ron,sp/BV trade-off to the conventional VDMOS (a 38% reduction of Ron,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of Ron,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively." @default.
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- W1490052676 date "2011-12-01" @default.
- W1490052676 modified "2023-09-25" @default.
- W1490052676 title "A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands" @default.
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- W1490052676 doi "https://doi.org/10.1088/1674-1056/20/12/128501" @default.
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