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- W1490808623 abstract "A novel small-dimension poly-Si TFT with ultrathin channel (300 A) and W-raised source/drain is proposed. The kink effect is effectively suppressed due to the reduced channel thickness. Tungsten film selectively grown on the source/drain region greatly improves the sheet resistance as well as increases the drain current. Furthermore, the W film is selectively deposited under low temperature (300 oC). The process is simple and compatible with conventional low-temperature poly-Si (LTPS) process. Characteristics of devices with different channel thicknesses and dimensions are also studied, revealing that new devices with ultrathin channel are free from the floating body effect." @default.
- W1490808623 created "2016-06-24" @default.
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- W1490808623 date "2002-01-01" @default.
- W1490808623 modified "2023-09-27" @default.
- W1490808623 title "Novel Small-dimension Poly-Si TFTs with Improved Driving Current and Suppressed Short Channel Effects" @default.
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- W1490808623 doi "https://doi.org/10.1109/essderc.2002.194985" @default.
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