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• W1491330448 abstract "This chapter contains sections titled: Introduction Defects Formed in Nonpolar (1120) a-plane GaN Grown on (1120) 4H-SiC Defect Reduction Application of Pendeo-epitaxy for the Layers Grown on Nonpolar Substrates Application of Lateral Overgrowth for a-plane GaN Layers Grown on the r plane of Al2O3 Summary Acknowledgments References" @default.
• W1491330448 created "2016-06-24" @default.
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• W1491330448 date "2008-02-20" @default.
• W1491330448 modified "2023-09-23" @default.
• W1491330448 title "Defects Formed in Nonpolar GaN Grown on SiC and Al2O3 and their Reduction in Pendeo-epitaxial and Laterally Overgrown GaN Layers" @default.
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• W1491330448 doi "https://doi.org/10.1002/9783527623150.ch10" @default.
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