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- W1491983125 abstract "Abstract : The surface electronic structure and certain aspects of the surface chemistry of amorphous and crystalline Si and Ge as well as crystalline SrTiO3 ZnO, and Sn have been studied using photoemission spectroscopy and Auger electron spectroscopy. By examining the surface, valence, and core states a more detailed picture of the surface electronic structure and chemistry could be obtained than has been generally possible in the past. Of particular importance has been the use of Stanford Synchrotron Radiation Laboratory which has provided continuously tunable radiation from 10 to 300 eV. Using this capability, it is possible, for example, to examine the surface states and core levels as a gas is adsorbed. It has been found possible to adsorb oxygen on Si in such a way that the surface states are removed but the usual shift in the Si 2p core level associated with chemical bonding is missing. This indicates a new type of 'covalent' bonding, previously unexpected. These results can give new insight into the kinetics of oxygen takeup on Si." @default.
- W1491983125 created "2016-06-24" @default.
- W1491983125 creator A5048848576 @default.
- W1491983125 date "1978-01-30" @default.
- W1491983125 modified "2023-10-16" @default.
- W1491983125 title "Studies of the Surface Electronic Structure and Chemistry of Si, Ge, and Other Solids" @default.
- W1491983125 doi "https://doi.org/10.21236/ada051970" @default.
- W1491983125 hasPublicationYear "1978" @default.
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