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• W1494286525 abstract "In this paper, we present the results of a detailed study done on the correlation between frequency dispersion observed in AC admittance measurements and threshold voltage shifts observed in BTI reliability measurements on III-V MOS devices. We developed a detailed AC admittance model for MOS devices with border traps to study the effect of trap parameters on the AC admittance. We show, with the help of simulations and experiments, a clear correlation between border trap characteristics in AC admittance and BTI behavior. In addition, we propose a simplified and quick method to qualitatively characterize border traps using G/ω as a measure for their density." @default.
• W1494286525 created "2016-06-24" @default.
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• W1494286525 date "2015-04-01" @default.
• W1494286525 modified "2023-10-01" @default.
• W1494286525 title "The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices" @default.
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• W1494286525 doi "https://doi.org/10.1109/irps.2015.7112742" @default.
• W1494286525 hasPublicationYear "2015" @default.
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