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- W1495921635 abstract "The transport data of n-doped gallium-nitride self-assembled nanowires grown by metal-organic vapor-phase-epitaxy are determined. The wire diameter varies from 0.4 μm to 1.6 μm while the length was up to 50 μm. Optical lithography and lift-off were used to form Ti/Au multiple contacts to the nanowires for transmission line measurements. A specific contact resistance of ρC = 1.74 × 10−7 Ω cm2 and a nanowire resistivity of ρNW = 2.27 × 10−3 Ω cm could be determined. Electrical conductivity measurements were carried out and a model of the wire resistance as a function of the nanowire radius and the charge carrier concentration was developed. Using this model, the magnitude of the doping level of the n-GaN nanowires is determined. Based on this data, a dopant concentration of the GaN wires of about n = 1020 cm−3 has been investigated." @default.
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- W1495921635 date "2015-08-24" @default.
- W1495921635 modified "2023-09-26" @default.
- W1495921635 title "Electrical characterization and transport model of n-gallium nitride nanowires" @default.
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- W1495921635 doi "https://doi.org/10.1063/1.4929439" @default.
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