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• W1496316974 abstract "Drain current of AlGaN/GaN high electron mobility transistors (HEMTs) is measured to decrease/increase with in-plane tensile/compressive external strain. Such a trend is opposite to the conventional theory of direct piezoelectric effect on 2-D electron gas (2DEG). The reason is found to be the dependence of nickel gate barrier height on external strain, which strongly affects HEMTs’ threshold voltage and 2DEG concentration. The Ni/AlGaN interface states are proposed to be responsible for strain-induced gate barrier variations, which are important for device performances and sensor applications." @default.
• W1496316974 created "2016-06-24" @default.
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• W1496316974 date "2015-09-01" @default.
• W1496316974 modified "2023-10-16" @default.
• W1496316974 title "Piezoelectricity-Induced Schottky Barrier Height Variations in AlGaN/GaN High Electron Mobility Transistors" @default.
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• W1496316974 doi "https://doi.org/10.1109/led.2015.2456178" @default.
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