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• W1497159904 abstract "The scaling of CMOS devices makes mandatory the study of new materials to overcome the physical limitations of the Si technology. Germanium is a good candidate to replace silicon for the channel to improve the carrier mobility. High‐K dielectrics such as HfO2 are investigated to replace the gate oxide (SiO2) to decrease both leakage currents and EOT. For the gate electrode, it is also crucial to move from poly‐silicon to a metal gate like TiN to adjust work function and to suppress poly‐depletion in order to decrease EOT. However, to reach optimal device performances, both the Ge/high‐K and high‐K/TiN interfaces need to be optimized. In order to passive and prevent Ge oxidation we have deposited a very thin Si interlayer prior to the high‐k growth. A thin Si layer (Si capping) is epitaxially grown on Ge and then partially oxidized before high‐k deposition. The exact control of the Si capping layer is of major importance. It must be enough thick to prevent germanium oxidation when the partial oxidation of Si is realized and as low as possible in order to keep the benefit of the better transport properties in germanium. In this contribution, we present non‐destructive chemical and concentration profile of both critical buried interfaces by mean of Hard X‐ray Photoelectron Spectroscopy (HAXPES) of a Ge/Si/SiO2/HfO2/TiN stack, with thickness of 2500, 0.9, 0.5, 4 and 4 nm, respectively. Experiments are performed at the SpLine HAXPES station of the ESRF equipped with a novel photoemission set‐up in combination with surface X‐ray diffraction (SXRD). The profiles obtained clearly show that the Si interlayer prevents the Ge oxidation and the presence of a new Hf state which is related to an interface chemical shift. Our results demonstrate the excellent capability of HAXPES to study buried interfaces." @default.
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• W1497159904 date "2007-01-01" @default.
• W1497159904 modified "2023-09-22" @default.
• W1497159904 title "Hard X-ray photoemission experiments on novel Ge-based metal gate∕high-k stacks" @default.
• W1497159904 cites W2030765255 @default.
• W1497159904 doi "https://doi.org/10.1063/1.2799393" @default.
• W1497159904 hasPublicationYear "2007" @default.
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