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• W1497185626 abstract "A resistive switching device based on the stacked α-Fe2O3/Nb–SrTiO3 is proposed and fabricated that demonstrates excellent bipolar resistive switching behaviors including the uniformity, endurance, and retention performance. The Schottky-like current-voltage characteristics correlated with set process were observed in both high resistive states (HRSs) and low resistive states (LRSs) of the device. Importantly, the anticrosstalk characteristic, possessing higher reversed-biased LRS resistance than the forwarded-biased HRS resistance, indicates the potential applications of the stacked α-Fe2O3/Nb–SrTiO3 for multilevel storage in the cross-bar memory arrays. The carrier injection and trapping mechanism is suggested to explain the observed phenomena." @default.
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• W1497185626 date "2010-12-27" @default.
• W1497185626 modified "2023-09-27" @default.
• W1497185626 title "Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device" @default.
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• W1497185626 doi "https://doi.org/10.1063/1.3532970" @default.
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