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- W1497282355 abstract "For a successful combination of Si electronics with biological applications a defined placement of biomolecules at Si surfaces is an important requirement. One way to realize this is the using of Coulomb interaction of biomolecules with dislocations in Si. Such a dislocation network could be formed by direct wafer bonding. In case of misorientation of the wafers, the network will be formed at the interface between them. The dislocations will be surrounded with a space charge region being connected with an electrostatic barrier. By variation of the misorientation of the wafers the distance between the dislocations could be changed. The relatively short range of the fields necessitate the placement of the dislocation networks close to the Si surface. This was done with a smart cut® process whereas the wafer is thinned down from one site. DNA molecules were adsorbed on such substrates." @default.
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- W1497282355 date "2008-01-01" @default.
- W1497282355 modified "2023-09-27" @default.
- W1497282355 title "Charge pattern formation at silicon surfaces for defined biomolecule adsorption" @default.
- W1497282355 doi "https://doi.org/10.1063/1.3012296" @default.
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